High Speed GaAlAs Infrared Emitter
OPE5687HP
The
OPE5687HP
is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
鈥?/div>
Ultra high-speed : 25ns rise time
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880nm wavelength
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Wide beam angle
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Low forward voltage
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High power and high reliability
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Available for pulse operating
APPLICATIONS
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Emitter of IrDA
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IR Audio and Telephone
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High speed IR communication
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IR LANs
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Available for wireless digital data transmission
DIMENSIONS (Unit : mm)
5.0
1.3 Max
2-鈻?.5
2.0
2.5
5.7
Anode
Cathode
Tolerance :
鹵0.2mm
STORAGE
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Condition : 5擄C~35擄C,R.H.60%
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Terms : within 3 months from production date
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Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
(Ta=25擄C )
Item
Symbol
Rating
Power Dissipation
P
D
150
Forward current
I
F
100
*1
Pulse forward current
I
FP
1.0
Reverse voltage
V
R
4.0
Operating temp.
Topr.
-25~ +85
*2
Soldering temp.
Tsol.
260.
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Forward voltage
Reverse current
Capacitance
Radiant intensity
Power
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
*3
7.7
8.7
24.0 Min
Unit
mW
mA
A
V
擄C
擄C
Conditions
I
F
=50mA
V
R
=4V
f=1MHz
I
F
=50mA
I
F
=100mA
I
F
=50mA
I
F
=50
I
F
=50
I
F
=50
I
F
=50mA DC
+10mA p-p
(Ta=25擄C)
Min.
Typ.
1.5
20
50
35
880
45
鹵22
25/15
14
Max.
2.0
10
Unit
V
碌A(chǔ)
mW/
mW
nm
nm
deg.
ns
MHz
V
F
I
R
Ct
Ie
Po
位
p
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