High Speed GaAlAs Infrared Emitter
OPE5685
The
OPE5685
is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
鈥?/div>
High speed : 25ns rise time
鈥?/div>
850nm wavelength
鈥?/div>
Wide beam angle
鈥?/div>
Low forward voltage
鈥?/div>
High power and high reliability
鈥?/div>
Available for pulse operating
APPLICATIONS
鈥?/div>
Emitter of IrDA
鈥?/div>
IR Audio and Telephone
鈥?/div>
High speed IR communication
鈥?/div>
IR LANs
鈥?/div>
Available for wireless digital data transmission
DIMENSIONS (Unit : mm)
5.0
1.3 Max
5.7
8.7
24.0 Min
7.7
2-
0.5
2.0
2.5
Anode
Cathode
Tolerance :
鹵0.2mm
STORAGE
鈥?/div>
Condition : 5擄C~35擄C,R.H.60%
鈥?/div>
Terms : within 3 months from production date
鈥?/div>
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P
D
150
Forward current
I
F
100
Pulse forward current
I
FP
1.0
*1
Reverse voltage
V
R
4.0
Operating temp.
Topr.
-25~ +85
*2
Soldering temp.
Tsol.
260.
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
*3
*3
(Ta=25擄C)
Unit
MW
MA
A
V
擄C
擄C
Conditions
I
F
=50mA
V
R
=4V
f=1MHz
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA DC
+10mA p-p
Min.
Typ.
1.5
20
50
850
45
鹵22
25/13
14
(Ta=25擄C)
Max.
Unit
2.0
10
V
碌A(chǔ)
pF
mW/sr
nm
nm
deg.
ns
MHz
V
F
I
R
Ct
Ie
位p
鈭單?/div>
鈭單?/div>
tr/tf
fc
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
7
OPE5685 產(chǎn)品屬性
1
3.94mm
3.94mm
5.72mm
5 mm
LED
頂部安裝
通孔
850nm
2
50mA
85°C
-25°C
1.5V
IrLED
IrLED
44°
4V
OPE5685相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
GaAs Infrared Emitter
ETC
-
英文版
GaAs Infrared Emitter
ETC [ETC]
-
英文版
High Speed GaAlAs Infrared Emitter
ETC
-
英文版
High Speed GaAlAs Infrared Emitter
ETC [ETC]
-
英文版
High Speed GaAlAs Infrared Emitter
ETC
-
英文版
High Speed GaAlAs Infrared Emitter
ETC [ETC]
-
英文版
High Speed GaAlAs Infrared Emitter
ETC
-
英文版
High Speed GaAlAs Infrared Emitter
ETC [ETC]
-
英文版
GaAlAs Infrared Emitter
-
英文版
GaAlAs Infrared Emitter
OPTEK [OPT...
-
英文版
GAAIAS INFRARED EMITTER
ETC
-
英文版
GAAIAS INFRARED EMITTER
ETC [ETC]
-
英文版
High Speed GaAIAs Infrared Emitter
ETC
-
英文版
High Speed GaAIAs Infrared Emitter
ETC [ETC]
-
英文版
AIGaInP Ultra Bright Orange LED Lamp
ETC [ETC]
1
2
