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OPE5585 Datasheet

  • OPE5585

  • High Speed GaAlAs Infrared Emitter

  • 2頁

  • ETC

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High Speed GaAlAs Infrared Emitter
OPE5585
The
OPE5585
is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
鈥?/div>
High speed : 25ns rise time
鈥?/div>
850nm wavelength
鈥?/div>
Narrow beam angle
鈥?/div>
Low forward voltage
鈥?/div>
High power and high reliability
鈥?/div>
Available for pulse operating
APPLICATIONS
鈥?/div>
Emitter of IrDA
鈥?/div>
IR Audio and Telephone
鈥?/div>
High speed IR communication
鈥?/div>
IR LANs
鈥?/div>
Available for wireless digital data transmission
DIMENSIONS (Unit : mm)
5.0
1.3 Max
5.7
8.7
24.0 Min
7.7
2-
0.5
2.0
2.5
Anode
Cathode
Tolerance :
鹵0.2mm
STORAGE
鈥?/div>
Condition : 5擄C~35擄C,R.H.60%
鈥?/div>
Terms : within 3 months from production date
鈥?/div>
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P
DC
150
Forward current
I
FC
100
CCCC DC
I
FPC
1.0
Pulse forward current
Reverse voltage
V
RC
4.0
Operating temp.
Topr.
-25~ +85
CCCCCCCCCCCCCC
2
Tsol.
260.
Soldering temp.
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
V
F
C
Reverse current
I
R
C
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
C
Spectral bandwidth 50%
C
Half angle

Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
*3
(Ta=25)
Unit
C
EC
AC
C
擄CC
擄CC
fc
5
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
Conditions
I
F
=50
EC
V
R
=4VC
f=1
C
I
F
=50
EC
I
F
=50
EC
I
F
=50
C
I
F
=50
C
I
F
=50
C
I
F
D ECEEC
DD EC C
Min.
C
C
40
C
C
C
C
C
Typ.
1.5
C
20
100
850
45
鹵10
25/13
14
Max.
2.0
10
C
C
C
C
C
C
(Ta=25)
Unit
V
碌EC
C
/
C
C
deg.
ns
MHz

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