鈥?/div>
Side-looking package ideal for space
limited applications
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
photodiode being tested.
(4) To calculate typical dark current in
碌A(chǔ),
use the formula I
D
= 10
(0.042 TA-1.5)
where T
A
is
ambient temperature in
o
C.
Description
The OP950 device consists of a PIN
silicon photodiode molded in a clear
epoxy package which allows spectral
response from visible to infrared light
wavelengths. The wide receiving angle
provides relatively even reception over a
large area. The side-looking package is
designed for easy PC board mounting.
This photodiode is mechanically and
spectrally matched to Optek鈥?GaAs and
s
GaAlAs series of infrared emitting
diodes.
Typical Performance Curves
Coupling Characteristics
OP950 and OP240
V
R
= 5 V
I
F
= 20 mA
Relative Response vs.
Wavelength
位
- Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
3-58
Distance Between Lens Tips - inches
(972) 323-2200
Fax (972) 323-2396
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