鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Input (Light
Reverse voltage
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Temperature
Storage temperature
*2
Symbol
V
R
I
F
P
D
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Rating
3
50
75
30
5
20
100
鈭?0
to
+85
鈭?0
to
+100
Unit
V
mA
mW
V
V
mA
mW
擄C
擄C
emitting diode) Forward current
1: Anode
2: Cathode
3
1
3: Collector
4: Emitter
PRSTR104-005 Package
(Note) ( ) Dimension is reference
Operating ambient temperature
Note) *1: Input power derating ratio is
1.0 mW/擄C at T
a
鈮?/div>
25擄C.
*2: Output power derating ratio is
1.33 mW/擄C at T
a
鈮?/div>
25擄C.
鈻?/div>
Electrical-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Input
Forward voltage
characteristics Reverse current
Output
Collector-emitter cutoff current
characteristics (Base open)
Transfer
Collector current
*1
Rise time
Fall time
Symbol
V
F
I
R
I
CEO
I
C
t
r
t
f
I
F
=
50 mA
V
R
=
3 V
V
CE
=
10 V
V
CE
=
5 V, I
F
=
20 mA
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
0.5 mA, R
L
=
100
鈩?/div>
6
6
100
Conditions
Min
Typ
Max
1.5
10.0
200
1 500
0.5
Unit
V
碌A(chǔ)
nA
碌A(chǔ)
V
碌s
characteristics Collector-emitter saturation voltage V
CE(sat)
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: I
C
measurement circuit
*2: Switching time measurement circuit
(Unit: mm)
1
2.5
1
Sig. in
V
CC
(Input pulse)
Sig. out
50
鈩?/div>
R
L
(Output pulse)
90%
10%
t
r
t
f
t
r
: Rise time
t
f
: Fall time
CNB1304H
2- 1.5
prism
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00049BED
1
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