Integrated Photosensors
CNZ1414A
(ON1414A)
Integrated Photosensor
A
(0.3)
Unit : mm
SEC. A-A'
Device
center
4.2鹵0.1
1.2
0.5
+0.15
鈥?
(R0.1)
4.2
3.0鹵0.05
(2-C0.3)
Features
Ultraminiature : 4.2
脳
4.2 mm (height : 5.2 mm)
Low voltage operation, low current consumption
(V
CC
= 2.2 to 7 V, I
CCL
=0.8 mA typ.)
Fast response : t
PHL
= 3
碌s,
t
PLH
= 8
碌s
(typ.)
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
4.0 min.
(2-C0.3) 2-酶0.8鹵0.05
2-0.25
Gate the rest
0.3 max.
*3.2
3-0.5
*2-1.27
4: V
O
5: GND
1
2
3
4
5
1: Anode
2: Cathode
3: V
CC
(Note)
1. Tolerance unless otherwise specified is
鹵0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Output current
Output
(Photo IC)
Output voltage
Supply voltage
Power dissipation
Temperature
*1
*2
Symbol Ratings
V
R
I
F
P
D*1
I
O
V
O
V
CC
P
C*2
T
opr
6
50
75
8
12
7
80
鈥?5 to +85
Unit
V
mA
mW
mA
V
V
mW
藲C
藲C
Operating ambient temperature
Storage temperature
T
stg
鈥?40 to +100
Input power derating ratio is 1.0 mW/藲C at Ta
鈮?/div>
25藲C.
Output power derating ratio is 1.07 mW/藲C at Ta
鈮?/div>
25藲C.
Pin Connection
CNZ1414A
(Normally ON type)
Const. Voltage Cir.
Anode 1
3 V
CC
4 V
O
Cathode 2
5 GND
Note) The part number in the parenthesis shows conventional part number.
Not soldered 1.0 max.
5.2
3.0
(1.0)
CNZ1414A is ultraminiature, highly reliable transmissive
photosensor that has a high efficiency GaAs infrared light emitting
diode chip and a low voltage operation type high sensitivity Si-
integrated-photodetector chip wich are in a double molded resin
package.
A'
;;
;;
(1.5)
Overview
1
1
2
3
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