8.8 min.
SEC. A-A'
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Input (Light
Reverse voltage
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Temperature
Storage temperature
*2
Symbol
V
R
I
F
P
D
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Rating
3
50
75
30
5
20
100
鈭?5
to
+85
鈭?0
to
+100
Unit
V
mA
mW
V
V
mA
mW
擄C
擄C
emitting diode) Forward current
1: Anode
2: Cathode
3: Collector
4: Emitter
1
4
PISTR104-012 Package
(Note) 1. Tolerance unless otherwise specified is
鹵0.3
2. ( ) Dimension is reference
2
3
Note) *1: Input power derating ratio is 1.0 mW/擄C at
T
a
鈮?/div>
25擄C.
*2: Output power derating ratio is 1.34 mW/擄C
at T
a
鈮?/div>
25擄C.
Operating ambient temperature
鈻?/div>
Electrical-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Input
Forward voltage
Terminal capacitance
Output
Collector-emitter cutoff current
characteristics (Base open)
Collector-emitter capacitance
Transfer
Collector current
Rise time
*
Fall time
*
characteristics Reverse current
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C
t
r
t
f
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
V
CE
=
10 V, f
=
1 MHz
V
CC
=
10 V, I
F
=
20 mA, R
L
=
100
鈩?/div>
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
1 mA
R
L
=
100
鈩?/div>
6
6
0.3
0.5
5
35
200
Conditions
Min
Typ
1.2
Max
1.5
10
Unit
V
碌A(chǔ)
pF
nA
pF
mA
V
碌s
碌s
characteristics Collector-emitter saturation voltage V
CE(sat)
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
: Fall time
Sig. out
50
鈩?/div>
R
L
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00018BED
1
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