Transmissive Photosensors (Photo Interrupters)
ON1003
Photo Interrupter
A
For contactless SW, object detection
Outline
ON1003 is an ultraminiature, highly reliable transmittive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
1.5
(1.0)
Slit width
(0.3)
Unit : mm
A'
4.2
1.2
1.5
Device
center
(C0.3)
2-0.25
*3.2
Not soldered
1.0 max.
3.9
4.0 min. 5.2
2.8
Features
Ultraminiature : 4.2
脳
4.2 mm (height : 5.2 mm)
Fast response : t
r
, t
f
= 35
碌s
(typ.)
Highly precise position detection : 0.15 mm
Gap width : 1.2 mm
,,
,,
(1.5)
SEC. A-A'
4.2
(C0.5)
Gate the rest
0.3 max.
酶1.5
+0.1
鈥?
2-0.5
*2.54
1
3
2
4
2
4
1
Pin connection
3
(Note)
1. Tolerance unless otherwise specified is
鹵0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Symbol Ratings
V
R
I
F
P
D*1
I
C
6
50
75
20
35
6
75
Unit
V
mA
mW
mA
V
V
mW
藲C
藲C
藲C
*1
Input power derating ratio is
1.0mW/藲C at Ta
鈮?/div>
25藲C.
*2
Output power derating ratio is
1.0mW/藲C at Ta
鈮?/div>
25藲C.
*3
Soldering time is within 5 seconds.
Collector power dissipation
Operating ambient temperature
Temperature
Storage temperature
Soldering temperature
P
C*2
T
opr
鈥?5 to +85
T
stg
鈥?40 to +100
T
sol
*3
260
Electrical Characteristics
(Ta = 25藲C)
Parameter
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Output characteristics Collector cutoff current
Symbol
V
F
I
R
I
CEO
V
R
= 3V
V
CE
= 20V
100
35
Conditions
I
F
= 20mA
min
typ
1.2
max
1.4
10
100
1300
0.4
Unit
V
碌A
nA
碌A
V
碌s
Collector current
I
C
V
CE
= 5V, I
F
= 5mA
Transfer
characteristics Collector to emitter saturation voltage V
CE(sat)
I
F
= 10mA, I
C
= 50碌A
Response time
t
r
, t
f*
V
CC
= 5V, I
C
= 0.1mA, R
L
= 1000鈩?/div>
*
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
,,
,,
50鈩?/div>
R
L
,,
,,
,,,
Soldering bath
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
more than 1mm
1
1
2
3
