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Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available Screened To MIL-S-19500, TX, TXV and S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3脴 motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25擄C Unless Specified Otherwise
PART
NUMBER
OM6517SA
OM6526SA
I
C
(Cont.)
@ 90擄C, A
20
15
V
(BR)CES
V
1000
1000
V
CE (sat)
(Typ.)
V
4.0
4.0
T
f
(Typ.)
ns
300
300
q
JC
擄C/W
1.0
1.5
P
D
W
125
85
T
J
擄C
150
150
3.1
SCHEMATIC
.940
MECHANICAL OUTLINE
.144 DIA.
.260
MAX
.200
.100
2 PLCS.
.040
Collector
.545
.535
.740
.540
.050
.040
.250
.290
.685
.665
.800
.790
Z-Pak
.125 DIA.
2 PLS.
TO-254
.540
.550
.530
Gate
.125
2 PLCS.
.500
MIN.
.550
.510
.040 DIA.
3 PLCS.
.150
.005
Emitter
.150
.300
.045
.035
.150 TYP.
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter 鈥淐鈥?to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 157
1
2
