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Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available With Free Wheeling Diode
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3脴 motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25擄C Unless Specified Otherwise
PART
NUMBER
OM6516SC
OM6520SC
I
C
(Cont.)
@ 90擄C, A
25
25
V
(BR)CES
V
1000
1000
V
CE (sat)
(Typ.)
V
4.0
4.0
T
f
(Typ.)
ns
300
300
q
JC
擄C/W
1.0
1.0
P
D
W
125
125
T
J
擄C
150
150
3.1
SCHEMATICS
Collector
Collector
.165
.155
MECHANICAL OUTLINE
.695
.685
.270
.240
.045
.035
.835
.815
Gate
Gate
.707
.697
1
C
2
E
3
G
.550
.530
.092 MAX.
Emitter
Emitter
.750
.500
.065
.055
.140 TYP.
.005
OM6516SC
OM6520SC(w/Diode)
.200 TYP.
PACKAGE OPTIONS
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
MOD PAK
4 11 R2
Supersedes 2 07 R1
6 PIN SIP
3.1 - 155
1
2
