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Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Low Conductive Losses
Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS
@ 25擄C Unless Specified Otherwise
PART
NUMBER
OM6503SC
OM6504SC
I
C
(Cont.)
@ 90擄C, A
20
30
V
(BR)CES
V
500
500
V
CE (sat)
(Typ.)
V
2.8
2.8
T
f
(Typ.)
ns
400
400
q
JC
擄C/W
1.75
1.00
P
D
W
72
125
T
J
擄C
150
150
SCHEMATIC
Collector
.165
.155
MECHANICAL OUTLINE
.695
.685
.270
.240
.045
.035
3.1
.835
.815
.707
.697
Gate
Emitter
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
1
C
.750
.500
2
E
3
G
.550
.530
.092 MAX.
.005
.065
.055
.140 TYP.
.200 TYP.
PACKAGE OPTIONS
Note: IGBTs are also available in Z-Tab, dual and
quad pak styles. Please call the factory for
more information.
MOD PAK
4 11 R2
Supersedes 2 07 R1
6 PIN SIP
3.1 - 141