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Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Low Conductive Losses
Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS
@ 25擄C Unless Specified Otherwise
PART
NUMBER
OM6501ST
OM6502ST
I
C
(Cont.)
@ 90擄C, A
5
10
V
(BR)CES
V
500
500
V
CE (sat)
(Typ.)
V
2.8
2.8
T
f
(Typ.)
ns
400
400
q
JC
擄C/W
3.8
3.0
P
D
W
35
42
T
J
擄C
150
150
3.1
SCHEMATIC
Collector
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
PACKAGE OPTIONS
.150
.140
1 2 3
C E G
.537
.527
.430
.410
.038 MAX.
Gate
.750
.500
MOD PAK
.005
Emitter
.035
.025
.100 TYP.
.120 TYP.
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
6 PIN SIP
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 139