鈾?/div>
Radiation tolerant
NOTES:
Description
The OLS249 consists of a light emitting
diode optically coupled to a NPN silicon
phototransistor mounted and coupled in a
custom hermetic surface mount LCC package.
The very low input current makes the OLS249
well suited for direct CMOS to LSTTL / TTL
interfaces.
Electrical parameters are similar to the
JEDEC registered 4N49 optocoupler but with
much better CTR degradation characteristics due
to radiation exposure
Special electrical parametric selections are
availabe on request.
1. Measured between pins 1, 2 and 6 shorted together and pins 3,4 and 5 shorted together. T
A
= 25
擄C
and duration = 1 second.
2. Derate linearly to 125擄C free-air temperature at 0.67 mA /
擄C
above 65擄C.
3. For pulse width
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1
碌S,
pulse repetition rate
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300 pps.
4. Derate linearly to 125擄C free-air temperature at 3.0 mW /
擄C
above 25
擄C
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