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OBTS949 Datasheet

  • OBTS949

  • Smart Lowside Power Switch

  • 11頁

  • INFINEON   INFINEON

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

HITFET
廬
BTS 949
Smart Lowside Power Switch
Features
鈥?/div>
Logic Level Input
鈥?/div>
Input Protection (ESD)
鈥?/div>
Thermal Shutdown
鈥?/div>
Overload protection
鈥?/div>
Short circuit protection
鈥?/div>
Overvoltage protection
鈥?/div>
Current
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(lim)
I
D(ISO)
E
AS
60
18
9.5
19
V
m鈩?/div>
A
A
6000 mJ
limitation
鈥?/div>
Maximum current adjustable with external resistor
鈥?/div>
Current sense
鈥?/div>
Status feedback with external input resistor
鈥?/div>
Analog driving possible
Application
鈥?/div>
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
鈥?/div>
碌C compatible power switch for 12 V and 24 V DC applications
鈥?/div>
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
廬
chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
NC
Drain
dv/dt
limitation
Current
limitation
Overvoltage
protection
M
2
3
1
IN
4
CC
Over-
temperature
protection
ESD
R
CC
Overload
protection
Short circuit
Short circuit
protection
protection
Source
5
HITFET
廬
Semiconductor Group
Page 1
14.07.1998

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