NZT753
NZT753
PNP Current Driver Transistor
鈥?This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
3
2
1
4
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
- 100
- 120
- 5.0
- 4.0
- 55 ~ +150
Units
V
V
V
A
擄C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Conditions
I
C
= -10mA, I
B
= 0
I
C
= -100碌A(chǔ), I
E
= 0
I
E
= -100碌A(chǔ), I
C
= 0
V
CB
= -100V, I
E
= 0
T
A
= 100擄C
V
EB
= -4V, I
C
= 0
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1.0A
I
C
= -1.0A, I
C
= -50mA
I
C
= -1.0A, I
B
= -100mA
V
CE
= -2.0V, I
C
= -1.0A,
V
CE
= -5V, I
C
= -100mA, f = 100MHz
75
70
100
55
Min.
-100
-120
-5.0
-0.1
-10
-0.1
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
On Characteristics *
300
-0.3
-1.25
-1.0
V
V
V
MHz
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
Small Signal Characteristics
*Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics *
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Parameter
Total Device Dissipation
Derate above 25C
Thermal Resistance, Junction to Ambient
Max.
1.2
9.7
103
Units
W
mW/擄C
擄C/W
* Device mounted on FR-4 PCB 36mm
脳
18mm
脳
1.5mm; mounting pad for the collector lead min 6cm
2
.
漏2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
1
2
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