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NZT749 Datasheet

  • NZT749

  • PNP Current Driver Transistor

  • 40.68KB

  • 3頁

  • FAIRCHILD

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NZT749
NZT749
PNP Current Driver Transistor
鈥?This device is designed for power amplifier, regulator and switching
circuit where speed is important.
鈥?Sourced from process 5P.
4
3
2
1
SOT-223
1. Base 2, 4. Collector 3. Emitter
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-25
-35
-5.0
-4.0
- 55 ~ 150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -10mA, I
B
= 0
I
C
= -100碌A(chǔ), I
E
= 0
I
E
= -10碌A(chǔ), I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4V, I
C
= 0
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -1.0A
V
CE
= -2.0V, I
C
= -2.0A
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -2.0V
V
CE
= -5.0V, I
C
= -50mA
f = 100MHz
75
70
80
65
Min.
-25
-35
-5.0
-100
-0.1
Max.
Units
V
V
V
nA
碌A(chǔ)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics *
300
-0.3
-1.25
-1.0
V
V
V
MHz
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max.
1.2
9.7
103
Units
W
mW/擄C
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, July 2004

NZT749 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 4A

  • 25V

  • 300mV @ 100mA,1A

  • -

  • 80 @ 1A,2V

  • 1.2W

  • 75MHz

  • 表面貼裝

  • TO-261-4,TO-261AA

  • SOT-223-3

  • 帶卷 (TR)

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