NZT6727
NZT6727
PNP General Purpose Amplifier
鈥?This device is designed for general purpose medium power amplifiers
and switches requiring collecor currents to 1.0A.
鈥?Sourced from process 77.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-40
-50
-5.0
-1.5
- 55 ~ 150
Units
V
V
V
A
擄C
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -10mA, I
B
= 0
I
C
= -1.0mA, I
E
= 0
I
E
= -100碌A(chǔ), I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5.0V, I
C
= 0
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0
I
C
= -1.0A, V
CE
= -1.0V
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -10V, f = 20MHz
V
CB
= -10V, I
E
= 0, f = 1.0MHz
2.5
55
60
50
Min.
-40
-50
-5.0
-0.1
-0.1
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cut-off Current
DC Current Gain
On Characteristics
250
-0.5
-1.2
25
30
pF
V
V
V
CE
(sat)
V
BE
(on)
h
fe
C
cb
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal current Gain
Collector-Base Capacitance
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
1.0%
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
125
Units
W
mW/擄C
擄C/W
* Device mounted on FR-4PCB 36mm 脳 18mm 脳 1.5mm; mounting pad for the collector lead min. 6cm
2
.
漏2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
1
2
3
