NZT660/NZT660A PNP Low Saturation Transistor
April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
鈥?These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T =25擄C unless otherwise noted
a
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
NOTES:
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
NZT660
60
80
5
3
- 55 ~ +150
NZT660A
60
60
5
3
- 55 ~ +150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
T
a
= 25擄C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Test Conditions
I
C
= 10mA
I
C
= 100碌A(chǔ)
I
E
= 100碌A(chǔ)
V
CB
= 30V
V
CB
= 30V, T
A
= 100擄C
V
EB
= 4V
NZT660
NZT660A
Min.
60
80
60
5
Typ.
Max.
Units
V
V
V
V
100
10
100
nA
碌A(chǔ)
nA
On Characteristics *
h
FE
DC Current Gain
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
NZT660
NZT660A
70
100
250
80
25
300
550
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
NZT660/NZT660A Rev. C3
1
2
3
4
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