NZT605
NZT605
NPN Darlington Transistor
鈥?This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
鈥?Sourced from process 06.
4
3
2
1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
110
140
10
1.5
- 55 ~ +150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are baseed on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE
Parameter
Test Conditions
I
C
= 10mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 120V, I
E
= 0
V
CE
= 120V, I
E
= 0
V
EB
= 8.0V, I
C
= 0
I
C
= 50mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
I
C
= 1.0A, V
CE
= 5.0V
I
C
= 2.0A, V
CE
= 5.0V
I
C
= 250mA, I
B
= 0.25mA
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 10V, f = 20MHz
150
2000
5000
2000
500
Min.
110
140
10
10
10
100
Max.
Units
V
V
V
nA
nA
nA
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics *
100K
1
1.5
1.8
1.7
V
V
V
MHz
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
Small Signal Characteristics
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Parameter
Max.
1,000
8.0
125
Units
mW
mW/擄C
擄C/W
* Device mounted on FR-4 PCB 36mm
脳
18mm
脳
1.5mm; mounting pad for the collector lead min. 6cm
2
漏2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
1
2
3
