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NZT605_07 Datasheet

  • NZT605_07

  • NPN Darlington Transistor

  • 4頁

  • FAIRCHILD

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NZT605 NPN Darlington Transistor
January 2007
NZT605
NPN Darlington Transistor
鈥?This device designed for applications requiring extremely high gain at collector
currents to 1.0A and high breakdown voltage.
鈥?Sourced from process 06.
4
3
2
1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings *
T
Symbol
V
CEO
V
CBO
V
EBO
I
C
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector-Emitter Voltage
C
= 25擄C unless otherwise noted
Parameter
Value
110
140
10
Units
V
V
V
A
擄C
- Continuous
1.5
-55 to +150
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics *
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE
T
C
= 25擄C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cut-off Current
Conditions
I
C
= 10mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 120V, I
E
= 0
V
CE
= 120V, I
E
= 0
V
EB
= 8.0V, I
C
= 0
V
CE
= 5.0V, I
C
= 50mA
V
CE
= 5.0V, I
C
= 500mA
V
CE
= 5.0V, I
C
= 1.0A
V
CE
= 5.0V, I
C
= 1.5A
V
CE
= 5.0V, I
C
= 2.0A
I
C
= 250mA, I
B
= 0.25mA
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 10V, f = 20MHz
Min.
110
140
10
Max
Units
V
V
V
10
10
100
nA
nA
nA
On Characteristics *
DC Current Gain
2000
5000
2000
300
200
100K
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
1
1.5
1.8
1.7
V
V
V
Small Signal characteristics
Transition Frequency
150
MHz
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
NZT605 Rev. C

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