PRELIMINARY DATA SHEET
NEC's InGaAsP
MQW-DFB LASER DIODE
IN CAN PACKAGE FOR
2.5 Gb/s, CWDM APPLICATIONS
FEATURES
鈥?OPTICAL OUTPUT POWER
P
O
= 5.0 mW
鈥?PEAK EMISSION WAVELENGTH
位
p
= 1 470 to 1 610 nm
(Based on ITU-T recommendations)
鈥?LOW THRESHOLD CURRENT
I
th
= 10 mA
鈥?HIGH SPEED
t
r
= 100 ps MAX
鈥?SIDE MODE SUPPRESSION RATIO
SMSR = 40 dB
鈥?OPERATING CASE TEMPERATURE RANGE
T
C
= -20 to +85擄C
鈥?InGaAs MONITOR PIN-PD
鈥?CAN PACKAGE
脴
5.6 mm
鈥?BASED ON TELCORDIA RELIABILITY
NX6508
Series
DESCRIPTION
NEC's NX6508 Series are 1 470 to 1 610 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back
(DFB) laser diode with InGaAs monitor PIN-PD. These
devices are ideal for 2.5 Gb/s CWDM application.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -20 to +85擄C, unless otherwise speci鏗乪d)
PART NUMBER
SYMBOLS
P
o
V
op
I
th
PARAMETER AND CONDITIONS
Optical Output Power from Fiber, CW
Operating Voltage, P
o
= 5.0 mW
Threshold Current, T
C
= 25擄C
UNIT
mW
V
mA
NX6508 SERIES
MIN.
TYP.
5.0
1.1
10
1.6
20
50
畏
d
Differential Ef鏗乧iency
P
o
= 5.0 mW, T
C
= 25擄C
P
o
= 5.0 mW
螖畏
d
Temperature Dependence of Differential Ef鏗乧iency
螖畏
d
= 10 log
位
p
螖位/螖T
SMSR
t
r
畏
d
(@ T
C
擄C)
畏
d
(@ 25擄C)
nm
nm/擄C
dB
ps
位
p
鈭?
0.08
30
位
p
*1
0.1
40
100
位
p
+2
0.12
dB
W/A
0.18
0.10
鈭?.0
鈭?.6
0.25
MAX.
Peak Emission Wavelength, P
o
= 5.0 mW
Temperature Dependence of Peak Emission Wavelength, CW
Side Mode Suppression Ratio, P
o
= 5.0 mW
Rise Time, 20-80%, P
o
= 5.0 mW
Continued on next page
California Eastern Laboratories