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NTR1P02T3 Datasheet

  • NTR1P02T3

  • Power MOSFET

  • 50.53KB

  • 6頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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NTR1P02T1
Power MOSFET
鈭?0 V, 鈭? A, P鈭扖hannel SOT鈭?3 Package
Features
鈥?/div>
Ultra Low On鈭扲esistance Provides Higher Efficiency
and Extends Battery Life
R
DS(on)
= 0.180
W,
V
GS
= 鈭?0 V
R
DS(on)
= 0.280
W,
V
GS
= 鈭?.5 V
鈥?/div>
Power Management in Portable and Battery鈭扨owered Products
鈥?/div>
Miniature SOT鈭?3 Surface Mount Package Saves Board Space
鈥?/div>
Mounting Information for SOT鈭?3 Package Provided
Applications
http://onsemi.com
V
(BR)DSS
鈭?0 V
R
DS(on)
TYP
148 mW @ 鈭?0 V
I
D
MAX
鈭?.0 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
P鈭扖hannel
D
DC鈭扗C Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
G
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage 鈭?Continuous
Drain Current
鈭?Continuous @ T
A
= 25擄C
鈭?Pulsed Drain Current (t
p
鈮?/div>
1
ms)
Total Power Dissipation @ T
A
= 25擄C
Operating and Storage Temperature Range
Thermal Resistance 鈭?Junction鈭抰o鈭扐mbient
Maximum Lead Temperature for Soldering
Purposes, (1/8鈥?from case for 10 s)
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
Value
鈭?0
鹵20
鈭?.0
鈭?.67
400
鈭?55 to
150
300
260
mW
擄C
擄C/W
擄C
P2
W
Unit
V
V
A
1
2
SOT鈭?3
CASE 318
STYLE 21
3
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
P2W
1
Gate
2
Source
= Specific Device Code
= Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
Device
NTR1P02T1
NTR1P02T3
Package
SOT鈭?3
SOT鈭?3
Shipping
鈥?/div>
3000/Tape & Reel
10,000/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
July, 2004 鈭?Rev. 3
Publication Order Number:
NTR1P02T1/D

NTR1P02T3 產(chǎn)品屬性

  • 10,000

  • 分離式半導體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 20V

  • 1A

  • 180 毫歐 @ 1.5A，10V

  • 2.3V @ 250µA

  • 2.5nC @ 5V

  • 165pF @ 5V

  • 400mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 帶卷 (TR)

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