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NTQS6466 Datasheet

  • NTQS6466

  • TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6.8A I(D) |...

  • 4頁(yè)

  • ETC

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NTQS6466
Product Preview
Power MOSFET
6.8 Amps, 20 Volts
N鈥揅hannel TSSOP鈥?
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
New Low Profile TSSOP鈥? Package
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperatures
http://onsemi.com
6.8 AMPERES
20 VOLTS
RDS(on) = 17 m鈩?/div>
N鈥揅hannel
D
Applications
鈥?/div>
Power Management in Portable and Battery鈥揚(yáng)owered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
鈥?/div>
Lithium Ion Battery Applications
鈥?/div>
Note Book PC
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage
Continuous Drain Current
鈥?TJ = 150擄C (Note 1.)
鈥?TA = 25擄C
鈥?TA = 70擄C
Pulsed Drain Current (10
碌s
Pulse Width)
Continuous Source Current
(Diode Conduction) (Note 1.)
Maximum Power Dissipation
(Note 1.)
鈥?TA = 25擄C
鈥?TA = 70擄C
Operating Junction and Storage
Temperature Range
Single Pulse Drain鈥搕o鈥搒ource
Avalanche Energy 鈥?Starting
TJ= 25擄C
(VDD = 50 V, IL = 7.7 Apk,
L = 44 mH)
Symbol
VDS
VGS
ID
8.1
6.6
IDM
IS
PD
1.5
1.0
TJ, Tstg
EAS
1.05
0.67
擄C
J
1.35
"30
0.95
6.8
5.4
Apk
Adc
W
D
S
S
G
1.36
10
secs
20
12
Adc
1
Y
WW
X
Steady
State
Unit
Vdc
dc
8
G
S
MARKING
DIAGRAM
TSSOP鈥?
CASE 948S
PLASTIC
466
YWW
X
= Year
= Work Week
= MOSFET
PIN ASSIGNMENT
1
2
3
4
Top View
8
7
6
5
D
S
S
D
鈥?5 to +150
ORDERING INFORMATION
Device
NTQS6466
NTQS6466R2
Package
TSSOP鈥?
TSSOP鈥?
Shipping
100 Units/Rail
3000/Tape & Reel
1. Surface mounted to 1鈥?x 1鈥?FR鈥? board.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
漏
Semiconductor Components Industries, LLC, 2001
1
January, 2001 鈥?Rev. 0
Publication Order Number:
NTQS6466/D

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