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NTP6N60 Datasheet

  • NTP6N60

  • TRANSISTOR MOSFET

  • 74.16KB

  • 4頁(yè)

  • ETC

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NTP6N60
Product Preview
Preferred Device
TMOS 7 E-FET
鈩?/div>
Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode
Silicon Gate
This advanced TMOS E鈥揊ET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a drain鈥搕o鈥搒ource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls. These devices are
particularly well鈥搒uited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
New Features of TMOS 7
http://onsemi.com
TMOS POWER FET
6 AMPERES
600 VOLTS
RDS(on) = 1.2
鈩?/div>
N鈥揅hannel
D
鈥?/div>
Ultra Low On鈥揜esistance Provides Higher Efficiency
鈥?/div>
Reduced Gate Charge
Features Common to TMOS 7 and TMOS E鈥揊ETS
鈥?/div>
鈥?/div>
鈥?/div>
Avalanche Energy Specified
Diode Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
廬
G
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥揜epetitive (tp 10 ms)
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
600
600
Unit
Vdc
Vdc
Vdc
4
v
"
20
"
40
6.0
4.8
21
142
1.14
鈥?55 to 150
450
Drain
鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp 10
碌s)
Adc
1
2
3
v
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature
Range
Single Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 100 V, VGS = 10 Vdc,
IL = 6 A, L = 25 mH, RG = 25
鈩?
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for
Soldering Purposes, 1/8鈥?from case
for 10 seconds
Watts
W/擄C
擄C
1
mJ
2
3
4
擄C/W
TO鈥?20AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
Gate
Drain
Source
Drain
R
胃JC
R
胃JA
TL
0.88
62.5
260
擄C
ORDERING INFORMATION
Device
NTP6N60
Package
TO220AB
Shipping
50 Units/Rail
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
April, 2000 鈥?Rev. 0
Publication Order Number:
NTP6N60/D

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