鈥?/div>
Planar HD3e Process for Fast Switching Performance
Low R
DSon
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Fast Switching
65 A, 24 V
R
DS(on)
= 8.3 mW (TYP)
D
MAXIMUM RATINGS
(T
J
= 25擄C Unless otherwise specified)
Parameter
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage
Continuous
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
and
T
stg
E
AS
Value
24
鹵20
65
160
78
鈥?5 to
150
TBD
Unit
V
dc
V
dc
A
A
W
擄C
4
mJ
TO鈥?20AB
CASE 221A
Style 5
xxxxx
YWW
S
G
Drain Current (Continuous @ T
A
= 25擄C (Note 3)
Single Pulse (tp = 10
ms)
Total Power Dissipation @ T
A
= 25擄C
Operating and Storage Temperature
Single Pulse Drain鈥搕o Source Avalanche
Energy 鈥?Starting T
J
=25擄C
(V
DD
= 50 V
dc
, V
GS
= 5 V
dc
, I
L
= A
pk
, L = 1 mH,
R
G
= 25
W)
Thermal Resistance
Junction鈥搕o鈥揅ase
Junction鈥搕o鈥揂mbient (Note 1)
Junction鈥搕o鈥揂mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from Case for 10 Seconds
MARKING
DIAGRAMS
R
qJC
R
qJA
R
qJA
T
L
1.6
67
120
260
擄C/W
1
擄C
D
2
PAK
CASE 418B
Style 2
2
3
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area
1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
3. Chip current capability limited by package.
4
2
1 3
xxxxx
YWW
PIN ASSIGNMENT
PIN
1
2
3
4
FUNCTION
Gate
Drain
Source
Drain
xxxxx
Y
WW
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTB65N02R
NTB65N02RT4
Package
D
2
PAK
D
2
PAK
TO鈥?20AB
Shipping
50 Units/Rail
800 Tape & Reel
50 Units/Rail
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
NTP65N02R
漏
Semiconductor Components Industries, LLC, 2002
1
October, 2002 鈥?Rev. 0
Publication Order Number:
NTB65N02R/D
1
2
3
4
