Single Drain鈭抰o鈭扴ource Avalanche Energy 鈭?/div>
Starting T
J
= 25擄C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 21.6 A, L = 3.0 mH, R
G
= 25
鈩?
Thermal Resistance
鈭?Junction鈭抰o鈭扖ase
鈭?Junction鈭抰o鈭扐mbient
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
150
150
"20
"40
Adc
37
23
111
178
1.43
鈭?5 to
+150
700
W
W/擄C
擄C
mJ
1
擄C/W
R
胃JC
R
胃JA
T
L
0.7
62.5
260
擄C
Unit
Vdc
Vdc
Vdc
37 AMPERES
150 VOLTS
50 m鈩?@ V
GS
= 10 V
N鈭扖hannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
TO鈭?20AB
CASE 221A
STYLE 5
NTP35N15
LLYWW
3
Source
2
Drain
1
Gate
2
3
1. Pulse Test: Pulse Width = 10
碌s,
Duty Cycle = 2%.
NTP35N15
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTP35N15
Package
TO鈭?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2003
1
December, 2003 鈭?Rev. 2
Publication Order Number:
NTP35N15/D