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NTP35N15/D Datasheet

  • NTP35N15/D

  • Power MOSFET 37 Amps， 150 Volts

  • 8頁

  • ETC

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NTP35N15
Preferred Device
Product Preview
Power MOSFET
37 Amps, 150 Volts
N鈥揅hannel TO鈥?20
Features
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Avalanche Energy Specified
鈥?/div>
IDSS and RDS(on) Specified at Elevated Temperature
Typical Applications
http://onsemi.com
37 AMPERES
150 VOLTS
50 m鈩?@ VGS = 10 V
N鈥揅hannel
D
鈥?/div>
PWM Motor Controls
鈥?/div>
Power Supplies
鈥?/div>
Converters
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揝ource Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥揜epetitive (tp
v10
ms)
Drain Current
鈥?Continuous @ TA 25擄C
鈥?Continuous @ TA 100擄C
鈥?Pulsed (Note 1.)
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Drain鈥搕o鈥揝ource Avalanche Energy 鈥?/div>
Starting TJ = 25擄C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 21.6 A, L = 3.0 mH, RG = 25
鈩?
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
150
150
"20
"40
Adc
37
23
111
178
1.43
鈥?5 to
+150
700
W
W/擄C
擄C
mJ
4
Unit
Vdc
Vdc
Vdc
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TO鈥?20AB
CASE 221A
STYLE 5
NTP35N15
LLYWW
3
Source
2
Drain
1
1
Gate
2
3
擄C/W
R
胃JC
R
胃JA
TL
0.7
62.5
260
擄C
NTP35N15
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
1. Pulse Test: Pulse Width = 10
碌s,
Duty Cycle = 2%.
ORDERING INFORMATION
Device
NTP35N15
Package
TO鈥?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
漏
Semiconductor Components Industries, LLC, 2001
1
June, 2001 鈥?Rev. 0
Publication Order Number:
NTP35N15/D

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