Single Drain鈥搕o鈥揝ource Avalanche Energy 鈥?/div>
Starting T
J
= 25擄C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 20 A, L = 3.0 mH, R
G
= 25
鈩?
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
T
J
, T
stg
E
AS
450
擄C/W
R
胃JC
R
胃JA
T
L
0.7
62.5
260
擄C
Value
200
200
"30
"40
Adc
30
22
90
214
1.43
鈥?5 to
+175
W
W/擄C
擄C
mJ
4
Unit
Vdc
Vdc
Vdc
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TO鈥?20AB
CASE 221A
STYLE 5
NTP30N20
LLYWW
3
Source
2
Drain
1
1
Gate
2
3
NTP30N20
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
1. Pulse Test: Pulse Width = 10
碌s,
Duty Cycle = 2%.
ORDERING INFORMATION
Device
NTP30N20
Package
TO鈥?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
漏
Semiconductor Components Industries, LLC, 2002
1
February, 2002 鈥?Rev. 2
Publication Order Number:
NTP30N20/D