鈥?/div>
Avalanche Energy Specified
Diode Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
廬
G
S
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥揜epetitive (tp 10 ms)
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
600
600
Unit
Vdc
Vdc
Vdc
4
v
"
20
"
40
10
8.0
35
201
1.61
鈥?55 to 150
500
Drain
鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp 10
碌s)
Adc
1
2
3
v
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature
Range
Single Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 100 V, VGS = 10 Vdc,
IL = 10 A, L = 10 mH, RG = 25
鈩?
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for
Soldering Purposes, 1/8鈥?from case
for 10 seconds
Watts
W/擄C
擄C
1
mJ
2
3
4
擄C/W
TO鈥?20AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
Gate
Drain
Source
Drain
R
胃JC
R
胃JA
TL
0.62
62.5
260
擄C
ORDERING INFORMATION
Device
NTP10N60
Package
TO220AB
Shipping
50 Units/Rail
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
April, 2000 鈥?Rev. 0
Publication Order Number:
NTP10N60/D
1
2
3
4
