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NTMS7N03R2 Datasheet

  • NTMS7N03R2

  • Power MOSFET 7 Amps, 30 Volts

  • 12頁

  • ONSEMI

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NTMS7N03R2
Power MOSFET
7 Amps, 30 Volts
N-Channel SO-8
Features
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Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SO-8 Surface Mount Package
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
DC-DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD in
Many Applications
Rating
Drain-to-Source Voltage
Drain-to-Gate Voltage (R
GS
= 1.0 M鈩?
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction to Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25擄C
Drain Current - Continuous @ T
A
= 25擄C
Drain Current
- Continuous @ T
A
= 70擄C
Drain Current
- Pulsed (Note 4)
Thermal Resistance - Junction to Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25擄C
Drain Current - Continuous @ T
A
= 25擄C
Drain Current
- Continuous @ T
A
= 70擄C
Drain Current
- Pulsed (Note 4)
Thermal Resistance - Junction to Ambient
(Note 3)
Total Power Dissipation @ T
A
= 25擄C
Drain Current - Continuous @ T
A
= 25擄C
Drain Current
- Continuous @ T
A
= 70擄C
Drain Current
- Pulsed (Note 4)
Operating and Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
R
胃JA
P
D
I
D
I
D
I
DM
R
胃JA
P
D
I
D
I
D
I
DM
R
胃JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
Value
30
30
鹵
20
50
2.5
8.5
6.8
25
85
1.47
6.5
5.2
18
156
0.8
4.8
3.8
14
- 55 to
+150
Unit
Vdc
Vdc
Vdc
擄C/W
Watts
Adc
Apk
擄C/W
Watts
Adc
Apk
擄C/W
Watts
Adc
Apk
擄C
1
http://onsemi.com
Typical Applications
7 AMPERES
30 VOLTS
R
DS(on)
= 23 mW
N-Channel
D
G
S
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
MARKING
DIAGRAM
8
SO-8
CASE 751
STYLE 13
E7N03
AYWW
E7N03
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
PIN ASSIGNMENT
N-C
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
Single Pulse Drain-to-Source Avalanche
E
AS
288
mJ
Energy - Starting T
J
= 25擄C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 4.0 mH, R
G
= 25
鈩?
1. 2鈥?SQ. FR-4 PCB mounting, (2 oz. Cu 0.06鈥?thick single sided), 10 Sec. Max.
2. 2鈥?SQ. FR-4 PCB mounting, (2 oz. Cu 0.06鈥?thick single sided),
t = steady state.
3. Minimum FR4 or G10 PCB, t = steady state.
4. Pulse test: Pulse Width = 300
碌s,
Duty Cycle = 2%.
ORDERING INFORMATION
Device
NTMS7N03R2
Package
SO-8
Shipping
2500/Tape & Reel
漏
Semiconductor Components Industries, LLC, 2002
1
November, 2002 - Rev. 3
Publication Order Number:
NTMS7N03R2/D

NTMS7N03R2 產(chǎn)品屬性

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 4.8A

  • 23 毫歐 @ 7A，10V

  • 3V @ 250µA

  • 43nC @ 10V

  • 1190pF @ 25V

  • 800mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • NTMS7N03R2OS

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