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NTMS3P03R2 Datasheet

  • NTMS3P03R2

  • TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3.86A I(D) ...

  • 12頁

  • ETC

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NTMS3P03R2
Power MOSFET
-3.05 Amps, -30 Volts
P鈥揅hannel SO鈥?
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High Efficiency Components in a Single SO鈥? Package
High Density Power MOSFET with Low RDS(on)
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for the SO鈥? Package is Provided
http://onsemi.com
鈥?.05 AMPERES
鈥?0 VOLTS
0.085
W
@ VGS = 鈥?0 V
P鈥揅hannel
D
Applications
鈥?/div>
DC鈥揇C Converters
鈥?/div>
Low Voltage Motor Control
鈥?/div>
Power Management in Portable and Battery鈥揚owered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MOSFET MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 1.)
Total Power Dissipation @ TA = 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4.)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 2.)
Total Power Dissipation @ TA = 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4.)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 3.)
Total Power Dissipation @ TA = 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4.)
Operating and Storage
Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 鈥?0 Vdc, VGS = 鈥?.5 Vdc, Peak
IL = 鈥?.5 Apk, L = 5 mH, RG = 25
鈩?
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VGS
R
胃JA
PD
ID
ID
IDM
R
胃JA
PD
ID
ID
IDM
R
胃JA
PD
ID
ID
IDM
TJ, Tstg
EAS
Value
鈥?0
鹵20
171
0.73
鈥?.34
鈥?.87
鈥?.0
100
1.25
鈥?.05
鈥?.44
鈥?2
62.5
2.0
鈥?.86
鈥?.1
鈥?5
鈥?5 to
+150
140
Unit
V
V
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C
mJ
G
S
MARKING
DIAGRAM
SO鈥?
CASE 751
STYLE 13
1
E3P03
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
8
E3P03
LYWW
PIN ASSIGNMENT
N.C.
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
TL
260
擄C
ORDERING INFORMATION
Device
NTMS3P03R2
Package
SO鈥?
Shipping
2500/Tape & Reel
1. Minimum FR鈥? or G鈥?0 PCB, t = Steady State.
2. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single
sided), t = steady state.
3. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single
sided), t
鈮?/div>
10 seconds.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
漏
Semiconductor Components Industries, LLC, 2001
1
July, 2001 鈥?Rev. 1
Publication Order Number:
NTMS3P03R2/D

NTMS3P03R2 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 2.34A

  • 85 毫歐 @ 3.05A，10V

  • 2.5V @ 250µA

  • 25nC @ 10V

  • 750pF @ 24V

  • 730mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • NTMS3P03R2OS

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