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NTMD6P02R2 Datasheet

  • NTMD6P02R2

  • TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DS...

  • 8頁(yè)

  • ETC

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NTMD6P02R2
Preferred Device
Power MOSFET
6 Amps, 20 Volts
P鈥揅hannel SO鈥?, Dual
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SO鈥? Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SO鈥? Mounting Information Provided
http://onsemi.com
6 AMPERES
20 VOLTS
RDS(on) = 33 mW
P鈥揅hannel
D
Unit
V
V
擄C/W
W
A
A
W
A
A
擄C/W
W
A
A
W
A
A
擄C/W
W
A
A
W
A
A
8
1
L
Y
WW
= Location Code
= Year
= Work Week
S
G
Applications
鈥?/div>
Power Management in Portable and Battery鈥揚(yáng)owered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 1.)
Total Power Dissipation @ TA = 25擄C
Continuous Drain Current @ TA = 25擄C
Continuous Drain Current @ TA = 70擄C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 2.)
Total Power Dissipation @ TA = 25擄C
Continuous Drain Current @ TA = 25擄C
Continuous Drain Current @ TA = 70擄C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 3.)
Total Power Dissipation @ TA = 25擄C
Continuous Drain Current @ TA = 25擄C
Continuous Drain Current @ TA = 70擄C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
Symbol
VDSS
VGS
R
胃JA
PD
ID
ID
PD
ID
IDM
R
胃JA
PD
ID
ID
PD
ID
IDM
R
胃JA
PD
ID
ID
PD
ID
IDM
Value
鈥?0
"12
62.5
2.0
鈥?.8
鈥?.7
0.5
鈥?.89
鈥?0
98
1.28
鈥?.2
鈥?.6
0.3
鈥?.01
鈥?5
166
0.75
鈥?.8
鈥?.5
0.2
鈥?.48
鈥?0
MARKING
DIAGRAM
SO鈥?, Dual
CASE 751
STYLE 11
E6P02
LYWW
PIN ASSIGNMENT
Source鈥?
Gate鈥?
Source鈥?
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
1. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single
sided), t = 10 seconds.
2. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single
sided), t = steady state.
3. Minimum FR鈥? or G鈥?0 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
Top View
ORDERING INFORMATION
Device
NTMD6P02R2
Package
SO鈥?
Shipping
2500 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 1
Publication Order Number:
NTMD6P02R2/D

NTMD6P02R2 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • P-Channel

  • - 20 V

  • +/- 12 V

  • - 7.8 A

  • 0.027 Ohms

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 80 ns, 50 ns

  • 15 S

  • - 55 C

  • 2 W

  • 65 ns, 20 ns

  • 2500

  • 50 ns, 85 ns

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