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NTMD6N03R2 Datasheet

  • NTMD6N03R2

  • Power MOSFET

  • 8頁

  • ONSEMI

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NTMD6N03R2
Power MOSFET
30 V, 6 A, Dual N鈭扖hannel SO鈭?
Features
鈥?/div>
Designed for use in low voltage, high speed switching applications
鈥?/div>
Ultra Low On鈭扲esistance Provides
Higher Efficiency and Extends Battery Life
鈭?R
DS(on)
= 0.024
W,
V
GS
= 10 V (Typ)
鈭?R
DS(on)
= 0.030
W,
V
GS
= 4.5 V (Typ)
鈥?/div>
Miniature SO鈭? Surface Mount Package Saves Board Space
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, with Soft Recovery
Applications
V
DSS
30 V
http://onsemi.com
R
DS(ON)
TYP
24 m鈩?@ V
GS
= 10 V
I
D
MAX
6.0 A
N鈭扖hannel
D
D
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Dc鈭扗c Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
G
S
G
S
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage 鈭?Continuous
Drain Current
鈭?Continuous @ T
A
= 25擄C
鈭?Single Pulse (tp
鈮?/div>
10
ms)
Total Power Dissipation
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
Operating and Storage Temperature
Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 20 Vdc, Peak I
L
= 9.0 Apk,
L = 10 mH, R
G
= 25
鈩?
Thermal Resistance
鈭?Junction鈭抰o鈭扐mbient (Note 1)
鈭?Junction鈭抰o鈭扐mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
2.0
1.29
T
J
, T
stg
E
AS
鈭?5 to
+150
325
擄C
mJ
Value
30
"20
6.0
30
Unit
Volts
Volts
Adc
Apk
Watts
8
1
SO鈭?, DUAL
CASE 751
STYLE 11
1
MARKING
DIAGRAM
8
E6N03
LYWW
PIN ASSIGNMENTS
Source鈭?
Gate鈭?
Source鈭?
Gate鈭?
1
2
3
4
(Top View)
8
7
6
5
Drain鈭?
Drain鈭?
Drain鈭?
Drain鈭?
R
qJA
62.5
97
T
L
260
擄C/W
擄C
E6N03
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1鈥?pad size, t
鈮?/div>
10 s
2. When surface mounted to an FR4 board using 1鈥?pad size, t = steady state
ORDERING INFORMATION
Device
NTMD6N03R2
Package
SO鈭?
Shipping
鈥?/div>
2500/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2005
1
January, 2005 鈭?Rev. 1
Publication Order Number:
NTMD6N03R2/D

NTMD6N03R2 產(chǎn)品屬性

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • -

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 30V

  • 6A

  • 32 毫歐 @ 6A，10V

  • 2.5V @ 250µA

  • 30nC @ 10V

  • 950pF @ 24V

  • 2W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • NTMD6N03R2OS

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