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NTMD3P03R2 Datasheet

  • NTMD3P03R2

  • Power MOSFET -3.05 Amps, -30 Volts

  • 6頁

  • ONSEMI

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NTMD3P03R2
Power MOSFET
鈭?.05 Amps, 鈭?0 Volts
Dual P鈭扖hannel SO鈭?
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High Efficiency Components in a Dual SO鈭? Package
High Density Power MOSFET with Low R
DS(on)
Miniature SO鈭? Surface Mount Package 鈭?Saves Board Space
Diode Exhibits High Speed with Soft Recovery
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for the SO鈭? Package is Provided
http://onsemi.com
V
DSS
鈭?0 V
R
DS(ON)
TYP
85 m鈩?@ 鈭?0 V
I
D
MAX
鈭?.05 A
Applications
鈥?/div>
DC鈭扗C Converters
鈥?/div>
Low Voltage Motor Control
鈥?/div>
Power Management in Portable and Battery鈭扨owered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MOSFET MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage 鈭?Continuous
Thermal Resistance 鈭?/div>
Junction鈭抰o鈭扐mbient (Note 1)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4)
Thermal Resistance 鈭?/div>
Junction鈭抰o鈭扐mbient (Note 2)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4)
Thermal Resistance 鈭?/div>
Junction鈭抰o鈭扐mbient (Note 3)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 鈭?0 Vdc, V
GS
= 鈭?.5 Vdc, Peak
I
L
= 鈭?.5 Apk, L = 5 mH, R
G
= 25
鈩?
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
GS
R
胃JA
P
D
I
D
I
D
I
DM
R
胃JA
P
D
I
D
I
D
I
DM
R
胃JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
鈭?0
鹵20
171
0.73
鈭?.34
鈭?.87
鈭?.0
100
1.25
鈭?.05
鈭?.44
鈭?2
62.5
2.0
鈭?.86
鈭?.1
鈭?5
鈭?5 to
+150
140
Unit
V
V
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C
mJ
G
P鈭扖hannel
D
S
MARKING
DIAGRAM
8
1
SO鈭?
CASE 751
STYLE 11
ED3P03
LYWW
ED3P03
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
PIN ASSIGNMENT
Source鈭?
Gate鈭?
Source鈭?
Gate鈭?
1
2
3
4
8
7
6
5
Drain鈭?
Drain鈭?
Drain鈭?
Drain鈭?
Top View
T
L
260
擄C
ORDERING INFORMATION
Device
NTMD3P03R2
Package
SO鈭?
Shipping
鈥?/div>
2500/Tape & Reel
1. Minimum FR鈭? or G鈭?0 PCB, t = Steady State.
2. Mounted onto a 2鈥?square FR鈭? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single
sided), t = steady state.
3. Mounted onto a 2鈥?square FR鈭? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single
sided), t
鈮?/div>
10 seconds.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
May, 2004 鈭?Rev. 1
Publication Order Number:
NTMD3P03R2/D

NTMD3P03R2 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • P-Channel

  • - 30 V

  • +/- 20 V

  • - 3.05 A

  • 0.085 Ohms

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 35 ns, 45 ns

  • 5 S

  • - 55 C

  • 2 W

  • 42 ns, 16 ns

  • 2500

  • 32 ns, 45 ns

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