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NTMD3N08LR2 Datasheet

  • NTMD3N08LR2

  • TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DS...

  • 12頁(yè)

  • ETC

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NTMD3N08LR2
Advance Information
Power MOSFET
2.3 Amps, 80 Volts
N鈥揅hannel Enhancement鈥揗ode
SO鈥? Dual Package
Features
http://onsemi.com
鈥?/div>
Ultra Low On鈥揜esistance Provides Higher Efficiency
鈾?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
R
DS(on)
= 0.215
W,
V
GS
= 10 V
鈾?/div>
R
DS(on)
= 0.245
W,
V
GS
= 5.0 V
Low Reverse Recovery Losses
Internal R
G
= 50
W
Designed for Power Management Solutions in 42 V Automotive
System Applications
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Avalanche Energy Specified
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Mounting Information for SO鈥? Package Provided
2.3 AMPERES
80 VOLTS
215 m鈩?@ V
GS
= 5 V (Typ)
Applications
Integrated Starter Alternator
Electronic Power Steering
Electronic Fuel Injection
Catalytic Converter Heaters
DUAL SO鈥?
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
80
80
鹵15
鹵20
2.3
25
3.1
鈥?5 to
+175
25
A
W
擄C
mJ
3N08
A
Y
WW
Unit
V
V
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
(Top View)
= Specific Device Code
= Assembly Location
= Year
= Work Week
3N08
AYWW
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揝ource Voltage (R
GS
= 1.0 mW)
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage 鈥?/div>
Non鈥揜epetitive (t
p
鈮?/div>
10 ms)
Continuous Drain Current @ T
A
= 25擄C
Pulsed Drain Current (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting T
J
= 25擄C (V
DD
= 50 Vdc,
V
GS
= 5.0 Vdc, Peak I
L
= 7.0 Apk,
L = 1.0 mH, R
G
= 25
W)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
ORDERING INFORMATION
Device
R
qJA
T
L
48
260
擄C/W
擄C
NTMD3N08LR2
Package
SO鈥?
Shipping
2500/Tape & Reel
1. Pulse Test: Pulse Width = 10
ms,
Duty Cycle = 2%
2. Mounted onto a 2鈥?square FR鈥? board (1鈥?sq. oz. Cu 0.06鈥?thick single sided),
t
鈮?/div>
5 seconds
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
漏
Semiconductor Components Industries, LLC, 2002
1
August, 2002 鈥?Rev. 2
Publication Order Number:
NTMD3N08LR2/D

NTMD3N08LR2 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 80 V

  • +/- 15 V

  • 2.3 A

  • 0.215 Ohms

  • Dual Dual Drain

  • + 175 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 48 ns, 104 ns

  • - 55 C

  • 3.1 W

  • 62 ns, 95 ns

  • 2500

  • 52 ns, 47 ns

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