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NTHD2102P Datasheet

  • NTHD2102P

  • Power MOSFET −8.0 V, −4.6 A Dual P−Channel...

  • 6頁

  • ONSEMI

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NTHD2102P
Power MOSFET
鈭?.0 V, 鈭?.6 A Dual P鈭扖hannel ChipFETt
Features
鈥?/div>
Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
鈥?/div>
Miniature ChipFET Package 40% Smaller Footprint than TSOP鈭?
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb鈭扚ree Package is Available
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
50 mW @ 鈭?.5 V
鈭?.0 V
68 mW @ 鈭?.5 V
100 mW @ 鈭?.8 V
S
1
S
2
鈭?.6 A
I
D
MAX
G
1
G
2
Applications
鈥?/div>
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
鈥?/div>
Charge Control in Battery Chargers
鈥?/div>
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage 鈭?Continuous
Drain Current 鈭?Continuous
鈭?5 seconds
Total Power Dissipation
Continuous @ T
A
= 25擄C
(5 sec) @ T
A
= 25擄C
Continuous @ 85擄C
(5 sec) @ 85擄C
Operating Junction and Storage Temperature
Range
Continuous Source Current
(Diode Conduction)
Thermal Resistance (Note 1)
Junction鈭抰o鈭扐mbient, 5 sec
Junction鈭抰o鈭扐mbient, Continuous
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
D
P
D
1.1
2.1
0.6
1.1
T
J
, T
stg
Is
鈭?5 to
+150
鈭?.1
擄C
A
擄C/W
R
qJA
R
qJA
T
L
60
113
260
擄C
Value
鈭?.0
"8.0
鈭?.4
鈭?.6
Unit
V
V
A
W
D
1
P鈭扖hannel MOSFET
D
2
P鈭扖hannel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
D
1
8
D
1
7
D
2
6
D
2
5
1 S
1
2 G
1
3 S
2
4 G
2
1
2
3
4
MARKING
DIAGRAM
8
7
6
5
D5
M
Shipping
鈥?/div>
3000/Tape & Reel
3000/Tape & Reel
D5 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
NTHD2102PT1
NTHD2102PT1G
Package
ChipFET
ChipFET
(Pb鈭扚ree)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
December, 2004 鈭?Rev. 4
Publication Order Number:
NTHD2102P/D

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