鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C (Note 1.)
Total Power Dissipation @ TA = 25擄C (Note 2.)
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
鈥揓unction to Ambient (Note 1.)
鈥揓unction to Ambient (Note 2.)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
Value
60
60
鹵
15
鹵
20
3.0
1.4
9.0
2.1
1.3
0.014
鈥?5 to
175
74
Unit
Vdc
Vdc
Vdc
Vpk
Adc
ID
ID
IDM
PD
Apk
4
G
S
MARKING
DIAGRAM
Watts
Watts
W/擄C
擄C
mJ
1
2
3
SOT鈥?23
CASE 318E
STYLE 3
3055L
LWW
TJ, Tstg
EAS
3055L
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
擄C/W
R
胃JA
R
胃JA
TL
72.3
114
260
擄C
4
Drain
1. When surface mounted to an FR4 board using 1鈥?pad size, 1 oz. (Cu. Area
0.0995 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2鈥?.4 oz. (Cu. Area 0.272 in2).
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
Device
NTF3055L108T1
NTF3055L108T3
Package
SOT鈥?23
SOT鈥?23
Shipping
1000 Tape & Reel
4000 Tape & Reel
4000 Tape & Reel
NTF3055L108T3LF SOT鈥?23
漏
Semiconductor Components Industries, LLC, 2001
1
June, 2001 鈥?Rev. 0
Publication Order Number:
NTF3055L108/D