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NTES1N02/D Datasheet

  • NTES1N02/D

  • Power MOSFET 50 mAmps， 20 Volts

  • 4頁

  • ETC

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NTES1N02
Product Preview
Power MOSFET
50 mAmps, 20 Volts
N鈥揅hannel SC鈥?5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5 V Gate Drive
Low Threshold Voltage: Vth = 0.5 to 1.5 V
High Speed
Enhancement Mode
Small Package
http://onsemi.com
50 mAMPS
20 VOLTS
RDS(on) = 10
W
N鈥揅hannel
3
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current
鈥?Continuous @ TA = 25擄C
Total Power Dissipation @ TA = 25擄C
Channel Temperature
Operating and Storage Temperature
Range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Value
20
10
50
100
150
鈥?55 to
150
mW
擄C
擄C
Unit
Vdc
Vdc
mAdc
1
2
MARKING
DIAGRAM
3
SC鈥?5/SOT鈥?16
CASE 463
STYLE 1
2
1
N02
D
= Device Code
= Date Code
N02
D
PIN ASSIGNMENT
3 Drain
Gate 1
Top View
2 Source
ORDERING INFORMATION
Device
NTES1N02
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Package
SC鈥?5
Shipping
3000 Tape & Reel
漏
Semiconductor Components Industries, LLC, 2001
1
January, 2001 鈥?Rev. 0
Publication Order Number:
NTES1N02/D

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