NTE929
Integrated Circuit
General Purpose, High Current, NPN Transistor Array
Description:
The NTE929 is a versatile array of five high鈥揷urrent (to 100mA) NPN transistors on a common mono-
lithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e.
1mA) for applications in which offset parameters are of special importance.
Independent connections for each transistors plus a separate terminal for the substrate permit maxi-
mum flexibility in circuit design.
Features:
D
High I
C
100mA max
D
Low V
CEsat
(at 50mA) 0.7V max.
D
Matched pair (Q1 and Q2)
V
10
(V
BE
matched):
鹵5mV
max.
I
10
(at 1mA): 2.5碌A(chǔ) max.
D
5 independent transistors plus separate substrate connection.
Applications:
D
Signal processing and switching systems operating from DC to VHF
D
Lamp and relay driver
D
Differential amplifier
D
Temperature鈥揷ompensated amplifier
D
Thyristor firing
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Power Dissipation, P
D
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derate Above 55擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Linearly 6.67mW/擄C
Operating Ambient Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5 to +125擄C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case, 10sec max), T
L
. . . . . . . . . . . +265擄C
The following ratings apply for each transistor in the device:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揝ubstrate Voltage, V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.
1
2
