NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings:
(T
A
= +25擄C)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Base鈥揈mitter Voltage
Collector鈥揈mitter Saturation Voltage
Current Gain鈥揃andwidth Product
Collector Output Capacitance
Symbol
Test Conditions
Min
120
120
鈥?/div>
400
125
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
350
1.6
鈥?/div>
鈥?/div>
0.5
800
鈥?/div>
0.75
0.2
鈥?/div>
鈥?/div>
V
V
MHz
pF
V
V
碌A(chǔ)
V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)CBO
I
C
= 10碌A(chǔ), I
E
= 0
I
CBO
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
C
ob
V
CB
= 100V, I
B
= 0
V
CE
= 12V, I
C
= 2mA
V
CE
= 12V, I
C
= 10mA
V
CE
= 12V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 12V, I
C
= 5mA
V
CB
= 25V, I
E
= 0, f = 1MHz
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描述
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