NTE912
Integrated Circuit
General Purpose Transistor Array
(Three Isolated Transistors and One Differentially鈥揅onnected Transistor Pair)
Description:
The NTE912 consists of five general鈥損urpose silicon NPN transistors on a common monolithic sub-
strate in a 14鈥揕ead DIP type package. Two of the transistors are internally connected to form a differ-
entially鈥揷onnected pair.
The transistors of the NTE912 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-
ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-
trical and thermal matching.
Features:
D
Two Matched Pairs of Transistors:
V
BE
matched
鹵5mV
Input Offset Current 2碌A(chǔ) Max. @ I
C
= 1mA
D
5 General Purpose Monolithic Transistors
D
Operation from DC to 120MHz
D
Wide Operating Current Range
D
Low Noise Figure: 3.2dB Typ @ 1kHz
Applications:
D
General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency
Range from DC to VHF
D
Custom Designed Differential Amplifiers
D
Temperature Compensated Amplifiers
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Power Dissipation (T
A
鈮?/div>
+55擄C), P
D
Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derate Above 55擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/擄C
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector Substrate Voltage (Note 1), V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case, 10sec max), T
L
. . . . . . . . . . . +265擄C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin13) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
1
2
3
