NTE870
Integrated Circuit
Dual Operational Transconductance Amp
Description:
The NTE870 consists of two current controlled transconductance amplifiers each with differential in-
puts and a push鈥損ull output. The two amplifiers share common supplies but otherwise operate inde-
pendently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input
levels resulting in a 10dB signal鈥搕o鈥搉oise improvement referenced to 0.5 percent THD. Controlled
impedance buffers are provided which are especially designed to complement the dynamic range of
the amplifiers.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Supply Voltage, V+/V鈥?. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V or
鹵18V
Differential Input Voltage, V
ID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵5V
Diode Bias Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Amp Bias Current, I
ABC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Buffer Output Current, I
o
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mW
DC Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to V鈥?/div>
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +75擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Electrical Characteristics:
(T
A
= +25擄C, V+/V鈥?=
鹵15V,
I
ABC
= 500碌A(chǔ) unless otherwise specified)
Parameter
Input Offset Voltage (V
OS
)
Input Offset Voltage
V
OS
Including Diodes
Input Offset Change
Input Bias Current
I
B
T
A
= 鈥?0擄 to +75擄C
Symbol
V
IO
I
ABC
= 5碌A(chǔ)
Diode Base Current, I
D
= 500碌A(chǔ)
5碌A(chǔ)
鈮?/div>
I
ABC
鈮?/div>
500碌A(chǔ)
Test Conditions
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
0.4
0.3
0.5
0.1
0.4
1.0
Max
5.0
5.0
5.0
鈥?/div>
5.0
8.0
Unit
mV
mV
mV
mV
碌A(chǔ)
碌A(chǔ)
NTE870 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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