NTE85
Silicon NPN Transistor
General Purpose Amplifier
Applications:
D
Medium Power Amplifiers
D
Class B Audio Outputs
D
Hi鈥揊i Drivers
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200擄C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150擄C.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
30
50
5.0
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
100
100
Unit
V
V
V
nA
nA
Collector鈥揈mitter Breakdown
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 3
Voltage
Collector鈥揃ase Breakdown Voltage V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Voltage
Emitter Cutoff Current
V
(BR)EBO
I
E
= 100碌A(chǔ), I
C
= 0
I
CBO
I
EBO
V
CB
= 20V, I
E
= 0
V
BE
= 3V, I
C
= 0
Note 3. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
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