NTE832 & NTE832SM
Integrated Circuit
Tone Decoder
Description:
The NTE832 and NTE832SM are general purpose tone decoders designed to provide a saturated
transistor switch to GND when an input signal is present within the passband. The circuit consists
of an I and Q detector driven by a voltage controlled oscillator which determines the center frequency
of the decoder. External components are used to independently set center frequency, bandwidth, and
output delay.
Features:
D
Logic Compatible Output with 100mA Current Sinking Capability
D
Bandwidth Adjustment from 0 to 14%
D
Inherent Immunity to False Signals
D
High Stable Center Frequency
D
High Rejection of Out鈥揙f鈥揃and Signals and Noise
D
Center Frequency Adjustable from 0.01Hz to 500kHz
D
Frequecny Range Adjustable over 20:1 range by an External Resistor
D
Available in Standard 8鈥揕ead DIP (NTE832) and Surface Mount SOIC鈥? (NTE832SM)
Applications:
D
Touch Tone Decoder
D
Precision Oscillator
D
Frequency Monitoring and Control
D
Wide Band FSK Demodulation
D
Communications Paging Decoders
D
Carrier Current Remote Controls
D
Ultrasonic Controls (Remote TV, etc.)
Absolute Maximum Ratings:
Operating Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0V to V
CC
+0.5V
Output Voltage, V
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0擄 to +70擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. The maximum junction temperature of these devices is +100擄C. For operating at elevated
temperatures, devices must be derated on a thermal resistance of +187擄C/W, junction鈥搕o鈥揳mbi-
ent.
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