NTE78
Silicon NPN Transistor
RF Power Output
Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power
amplifiers in HF band mobile radio applications.
Features:
D
High Power Gain
D
Emitter Ballasted Construction for High Reliability and Good Performance
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector鈥揈mitter Voltage (R
BE
= 10鈩?, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (T
A
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83擄C/W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Emitter鈥揃ase Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Output Power
Collector Efficiency
Symbol
Test Conditions
Min
5
75
75
鈥?/div>
鈥?/div>
35
6.0
55
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
70
7.5
60
Max
鈥?/div>
鈥?/div>
鈥?/div>
100
100
180
鈥?/div>
鈥?/div>
W
%
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
(BR)EBO
I
E
= 1mA, I
C
= 0
V
(BR)CBO
I
C
= 1mA, I
E
= 0
V
(BR)CER
I
C
= 10mA, R
BE
= 10鈩?/div>
I
CBO
I
EBO
h
FE
P
O
畏
C
V
CB
= 30V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 100mA, Note 1
V
CC
= 12V, P
in
= 250mW, f =
27MHz
Note 1. Pulse test: Pulse Width = 150碌s, Duty Cycle = 5%.
NTE78 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE78相關(guān)型號(hào)PDF文件下載
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