NTE784
Integrated Circuit
Wide鈥揃and Power Amplifier
Description:
The NTE784 is a multistage, multipurpose, wide鈥揵and power amplifier on a single monolithic silicon
chip. This device employs a highly versitile and stable direct鈥揷oupled circuit configuration featuring
wide frequency range, high voltage and power gain, and high power output. These features plus in-
herent stability over a wide temperature range make the NTE784 extremely useful for a wide variety
of applications in military, industrial, and commercial equipment.
The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum
power output of 1W from a 12V DC supply with a typical power gain of 75dB.
Features:
D
High Power Output
D
Wide Frequency Range
D
High Power Gain
D
Single Power Supply for Class B Operation with Transformer
D
Built鈥揑n Temperature Tracking Voltage Regulator Provides Stable Operation
Applications:
D
AF Power Amplifiers for Portable and Fixed Sound and Communications Systems
D
Servo鈥揅ontrol Amplifier
D
Wide鈥揃and Linear Mixers
D
Video Power Amplifiers
D
Transmission鈥揕ine Driver Amplifier (Balanced and Unbalanced)
D
Fan鈥揑n and Fan鈥揙ut Amplifiers for Computer Logic Circuits
D
Lamp鈥揅ontrol Amplifiers
D
Motor鈥揅ontrol Amplifiers
D
Power Multivibrators
D
Power Switches
Absolute Maximum Ratings:
Power Dissipation (Without Heatsink, T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/擄C
Power Dissipation (With Heatsink, T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 55擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mW/擄C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60擄C/W
1
2
3
