NTE77
Silicon NPN Transistor
Broadband CATV Driver
Description:
The NTE77 is an NPN transistor in a TO39 type case designed to be utilized in broadband and linear
amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for
use in CATV driver stages in trunk line, bridger, and line extender amplifiers.
Features:
D
High Gain鈥揃andwidth Product: f
T
= 1.5GHz Typ
D
Low Intermodulation, Low Cross鈥揗odulation Distortion: X鈥揗OD = 鈥?7dB
D
Low Noise Figure: NF = 2.7dB Typ
D
Low Output Capacitance: C
ob
= 3.5pF Max @ V
CB
= 30V
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (T
A
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +50擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 5mA, I
B
= 0, Note 1
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0, Note 1
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CEO
V
CE
=, 28V, I
B
= 0
30
50
5
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0.1
V
V
V
mA
Symbol
Test Conditions
Min
Typ Max Unit
Note 1. Pulsed through 25mH Inductor.
NTE77 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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