NTE72
Silicon NPN Transistor
High Current Amp, Fast Switch
Features:
D
High Power: 100W @ T
C
= +50擄C, V
CE
= 40V
D
High Voltage: V
CEO
= 80V Min
D
High Current Saturation Voltage: V
CE(sat)
= 1.5V @ 10A
D
High Frequency: f
T
= 30MHz Min
D
Isolated Collector Package, No Isolating hardware Required
Absolute Maximum Ratings:
(Note 1)
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector鈥揈mitter Voltage (Note 2), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Power Dissipation (T
C
= +50擄C, V
CE
= 40V), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Lead Temperature (During Soldering, 60sec max), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300擄C
Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may
be impaired.
Note 2. This rating refers to a high current point where collector鈥揺mitter voltage is lowest.
Electrical Characteistics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
DC Pulse Current Gain (Note 3)
Symbol
Test Conditions
Min
80
100
6
50
70
35
45
Typ
鈥?/div>
鈥?/div>
鈥?/div>
95
108
51
91
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
200
鈥?/div>
鈥?/div>
Unit
V
V
V
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Notes 2 & 3
V
(BR)CES)
I
C
= 1mA, V
BE
= 0
V
(BR)EBO
I
E
= 1mA, I
C
= 0
h
FE
I
C
= 100mA, V
CE
= 5V
I
C
= 5A, V
CE
= 5V
I
C
= 5A, V
CE
= 5V, T
C
= 鈥?5擄C
I
C
= 10A, V
CE
= 5V
Note 2. This rating refers to a high current point where collector鈥揺mitter voltage is lowest.
Note 3. Pulse Conditions: Pulse Width = 300碌s, Duty Cycle = 1%.
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