NTE71
Silicon NPN Transistor
High Current Amp, Fast Switch
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter鈥揃ase VOltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise spcified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Emitte Cutoff Current
Collector Cutoff Current
V
(BR)CEO(sus)
I
C
= 100mA
I
EBO
I
CEX
V
EB
= 10V
V
CE
= 150V, V
BE
= 鈥?.5V
V
CE
= 150V, V
BE
= 鈥?.5V,
T
C
= +150擄C
ON Characteristics
(Note 1)
DC Current Gain
Collector Saturation Voltage
Base鈥揈mitter Voltage
h
FE
V
CE(sat)
V
BE
V
CE
= 3V, I
C
= 10A
I
C
= 10A, I
B
= 1.5A
I
C
= 10A, I
B
= 1.5A
10
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
1.5
2.5
V
V
150
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
250
2
20
V
碌A(chǔ)
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulse test: Pulse Width = 300碌s, Duy Cycle
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