NTE69
Silicon NPN Transistor
UHF/VHF Amplifier
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/擄C
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/擄C
Operating Junction Temperature Tange, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . 357擄C/W
Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise noted)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Colletor鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
ON Characteristics
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Small鈥揝ignal Characteristics
Current Gain鈥揃andwidth Product
Output Capaciatnce
Collector鈥揃ase Time Constant
f
T
C
obo
rbC
c
V
CE
= 12V, I
C
= 4mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 12V, I
E
= 4mA, f = 31.8MHz
750
鈥?/div>
鈥?/div>
1100
0.8
鈥?/div>
鈥?/div>
1.0
9.5
MHz
pF
ps
h
FE
V
CE(sat)
V
BE(sat)
V
CE
= 4V, I
C
= 4mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
25
鈥?/div>
鈥?/div>
60
200
750
鈥?/div>
350
950
mV
mV
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 100碌A(chǔ), I
C
= 0
25
35
3
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2 Pulse test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
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